| PART |
Description |
Maker |
| STK621-041 |
TENTATIVE
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| STK621-018 |
TENTATIVE
|
Sanyo Semicon Device
|
| G121X1-L03 |
TFT LCD Tentative Specification
|
AZ Displays
|
| G141I1-L01 |
TFT LCD Tentative Specification
|
AZ Displays
|
| 2SA839 |
SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
Unknow
|
| 2SA493 |
SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)(TENTATIVE)
|
Unknow
|
| TC55VEM316AXBN55 TC55VEM316AXBN TC55VEM316AXBN40 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55NEM208AFTN70 TC55NEM208A TC55NEM208AFPN TC55NE |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NVG1S8BFT00 TC58NVG1S3BFT00 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC58NS256DC EA10128 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
From old datasheet system
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
Toshiba Semiconductor
|
| TC51WHM616AXBN65 TC51WHM616AXBN70 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
